Pascal and Francis Bibliographic Databases

Help

Search results

Your search

kw.\*:("JONCTION PN")

Document Type [dt]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Publication Year[py]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Discipline (document) [di]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Language

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Results 1 to 24 of 24

  • Page / 1
Export

Selection :

  • and

PARTICULARITES DES CARACTERISTIQUES CAPACITE-TENSION DE DETECTEURS P-I-N AU SI(LI)DEMIDOVA GN.1972; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1972; NO 9; PP. 66-72; BIBL. 7 REF.Serial Issue

RESONANCE PARAMETRIQUE DANS UN CIRCUIT OSCILLANT AVEC CAPACITE NON LINEAIRE D'UNE JONCTION P-NSPASOV A YA.1972; IZVEST. INST. ELEKTRON., SOFIJA; BALG.; DA. 1972; VOL. 5; PP. 89-95; ABS. BULG. ANGLSerial Issue

NORMAL MODES OF SEMICONDUCTOR P-N-JUNCTION DEVICES FOR MATERIAL-PARAMETER DETERMINATION.LINDHOLM FA; TANG SAH C.1976; J. APPL. PHYS.; U.S.A.; DA. 1976; VOL. 47; NO 9; PP. 4203-4205; BIBL. 8 REF.Article

A MESA P-N DIODE ARRAY ACOUSTIC SURFACE WAVE CONVOLVER.JOLY R.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 29; NO 9; PP. 525-527; BIBL. 6 REF.Article

ADMITTANCE OF A FORWARD-BIASED P-N+ JUNCTION DIODEGOKHALE BV.1972; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1972; VOL. 19; NO 11; PP. 1215-1219; BIBL. 5 REF.Serial Issue

NON-LINEARITE DES CARACTERISTIQUES VOLT-AMPERE DES STRUCTURES HETEROGENES DE SEMICONDUCTEURS A JONCTIONS P-NAGAREV VN; STAFEEV VI.1976; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1976; VOL. 10; NO 7; PP. 1308-1310; BIBL. 8 REF.Article

LONG-LIFE GREEN N/P SEMICONDUCTOR LAMPS.FITZPATRICK JR; JONES BF; DOWNTON KJ et al.1976; J. PHYS., D; G.B.; DA. 1976; VOL. 9; NO 11; PP. L129-L130; BIBL. 1 REF.Article

CARACTERISTIQUE COURANT-TENSION D'UNE DIODE A HETEROJONCTION P-N. AVEC UN CONTACT N-N+ ET UNE BASE COMPENSEETESHABAEV A.1976; IZVEST. AKAD. NAUK UZ. S.S.R., FIZ.-MAT. NAUK; S.S.S.R.; DA. 1976; NO 3; PP. 42-45; ABS. OUZB.; BIBL. 3 REF.Article

RECOMBINATION IN SOLAR CELLS: THEORETICAL ASPECTSLANDSBERG PT.1981; PHOTOVOLTAIC AND PHOTOELECTROCHEMICAL SOLAR ENERGY CONVERSION. NORTH ATLANTIC TREATY ORGANIZATION. ADVANCED STUDY INSTITUTE/1980/GENT; USA/GBR; NEW YORK: LONDON: PLENUM PRESS; DA. 1981; PP. 1-66; BIBL. 31 REF.Conference Paper

REALISATION D'UN SPECTROMETRE ALPHA. APPLICATION A LA MESURE DE L'EQUILIBRE RADIOACTIF ENTRE LE RADON ET SES DESCENDANTS A VIE COURTE DANS LES MINES D'URANIUM ET DANS L'ATMOSPHERELANEGRASSE L.1972; ; S.L.; DA. 1972; PP. 1-89; BIBL. 3 P.; (THESE DOCT. UNIV., MENTION SCI.-PHYS.; UNIV. PAUL SABATIER DE TOULOUSE; 1972)Thesis

TRANSIENTS IN P-N JUNCTION SOLAR CELLS. = CARACTERISTIQUES TRANSITOIRES DES CELLULES SOLAIRES A JONCTION P-NDHARIWAL SR; KOTHARI LS; JAIN SC et al.1976; J. PHYS. D; G.B.; DA. 1976; VOL. 9; NO 4; PP. 631-641; BIBL. 7 REF.Article

MOBILITE ET LONGUEUR DE DIFFUSION DES ELECTRONS DANS DE L'ANTIMONIURE D'INDIUM DE TYPE PKOSOGOV OV; KIM GVAN DE; MARAMZINA MA et al.1976; IZVEST. VYSSH. UCHEBN. ZAVED., FIZ.; S.S.S.R.; DA. 1976; VOL. 19; NO 5; PP. 46-51; BIBL. 10 REF.Article

UTILISATION DES DETECTEURS A SEMICONDUCTEURS POUR LA DOSIMETRIE DANS LES CHAMPS NEUTRONIQUES GAMMA INTENSESKRAMER AGEEV EA; PARKHOMOV AG.1976; PRIBORY TEKH. EKSPER.; S.S.S.R.; DA. 1976; NO 3; PP. 56-57; BIBL. 4 REF.Article

RENDEMENT DE PHOTOPILES A DIODES DE SCHOTKY.ESTEVE D; SUAU JC; BERNARD J et al.1976; IN: ELECTR. SOL. COLLOQ. INT., TOULOUSE; 1976; TOULOUSE; CENT. NATL. ETUD. SPAT.; DA. 1976; PP. 469-479; BIBL. 7 REF.Conference Paper

OPTIMUM LOAD EXPRESSIONS FOR PN JUNCTION SOLAR CELLSGOVIL KK.1981; INT. J. ELECTRON. THEOR. EXP.; ISSN 0020-7217; GBR; DA. 1981; VOL. 50; NO 4; PP. 319-322; BIBL. 2 REF.Article

ANALYSIS OF SILICON SOLAR CELLS WITH STRIPE GEOMETRY JUNCTIONS.HU C; EDELBERG J.1977; SOLID-STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 2; PP. 119-123; BIBL. 8 REF.Article

THE PHYSICS OF HEAVILY DOPED N+-P JUNCTION SOLAR CELLSLANYON HPD.1981; SOL. CELLS; ISSN 0379-6787; CHE; DA. 1981; VOL. 3; NO 4; PP. 289-311; BIBL. 18 REF.Article

PHOTOVOLTAIC PROPERTIES OF CDTE P-N JUNCTIONS PRODUCED BY ION IMPLANTATION.CHU M; FAHRENBRUCH AL; BUBE RH et al.1978; J. APPL. PHYS.; U.S.A.; DA. 1978; VOL. 49; NO 1; PP. 322-326; BIBL. 17 REF.Article

DETERMINATION OF LIFETIMES AND RECOMBINATION CURRENTS IN P-N JUNCTION SOLAR CELLS, DIODES, AND TRANSISTORSNEUGROSCHEL A.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 1; PP. 108-115; BIBL. 22 REF.Article

SOLAR CELLS MADE BY LASER-INDUCED DIFFUSION DIRECTLY FROM PHOSPHINE GASTURNER GB; TARRANT D; POLLOCK G et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 12; PP. 967-969; BIBL. 9 REF.Article

INFLUENCE OF SURFACE STRUCTURE AND SURFACE ABSORBATES ON SOLID-PHASE EPITAXIAL GROWTHKISTEMAKER J; SARIS FW.1981; ; FRA; LUXEMBOURG: OFFICE FOR OFFICIAL PUBLICATIONS OF THE EUROPEAN COMMUNITIES; DA. 1981; EUR/7092; 4 P.; 30 CM; BIBL. 2 REF.; ENERGYReport

EPITAXIE EN PHASE VAPEUR DU GERMANIUM SUR GE ET GAAS: REALISATION ET ETUDE DE JONCTION P-N EN VUE DE LEUR INCORPORATION DANS UNE CELLULE SOLAIRE MULTICOLORE = VAPOUR PHASE GERMANIUM EPITAXY ON GE AND GAAS: PREPARATION AND STUDY OF P-N JUNCTION IN VIEW OF THEIR INCORPORATION INTO A MULTICOLOUR SOLAR CELLAHMAD AL RAWI NABEEL AMMAR.1982; ; FRA; DA. 1982; 152 F.; 30 CM; TH. DOCT.-ING.: PHYS. SOLIDES/MONTPELLIER 2/1982/777Thesis

PHOTOVOLTAIC PROPERTIES OF P-N JUNCTIONS IN CUINS2TELL B; THIEL FA.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 7; PP. 5045-5046; BIBL. 8 REF.Article

Seventh biennial university government industry microelectronics symposium, Rochester NY, June 9-11 1987Biennial university government industry microelectronics symposium. 7. 1987, 217 p.Conference Proceedings

  • Page / 1